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| DG201HS High-Speed Quad SPST CMOS Analog Switch Features D D D D D D D Fast Switching--tON: 38 ns Low On-Resistance: 25 W Low Leakage: 100 pA Low Charge Injection TTL/CMOS Logic Compatible Single Supply Compatibility High Current Rating: -30 mA Benefits D D D D D D D Faster Throughput Higher Accuracy Reduced Pedestal Error Upgrades Existing Designs Simple Interfacing Replaces HI201HS, ADG201HS Space Savings (TSSOP) Applications D D D D D D D D D Data Acquisition Hi-Rel Systems Sample-and-Hold Circuits Communication Systems Automatic Test Equipment Integrator Reset Circuits Choppers Gain Switching Avionics Description The DG201HS is an improved monolithic device containing four independent analog switches. It is designed to provide high speed, low error switching of analog signals. Combining low on-resistance (25 W) with high speed (tON: 38 ns), the DG201HS is ideally suited for high speed data acquisition requirements. To achieve high voltage ratings and superior switching performance, the DG201HS is built on a proprietary high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply values, when off. Functional Block Diagram and Pin Configuration Dual-In-Line, SOIC and TSSOP D1 IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 IN2 15 D2 14 S2 V- 13 V+ NC 12 NC 11 S3 10 D3 9 IN3 GND S4 Key 4 5 6 7 8 9 D4 10 11 12 13 D3 3 2 LCC IN1 NC IN2 1 20 D2 19 18 17 16 15 14 S2 V+ NC NC S3 S1 Truth Table Logic 0 1 Switch ON OFF Logic "0" v 0.8 V g Logic L i "1" w 2.4 V 24 IN4 NC IN3 Top View Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70038. Siliconix E-77071--Rev. E, 01-Sep-97 1 DG201HS Ordering Information Temp Range Package 16-Pin Plastic DIP Part Number DG201HSDJ DG201HSDY DG201HSDQ DG201HSAK/883 DG201HSAZ/883 -40 to 85_C 16-Pin Narrow SOIC 16-Pin TSSOP 16-Pin CerDIP -55 to 125_C LCC-20 Absolute Maximum Ratings V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . (V-) -4 V to (V+) +4 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . 100 mA Storage Temperature (A Suffix) . . . . . . . . . . . . . -65 to 150_C (D Suffix) . . . . . . . . . . . . . -65 to 125_C Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/_C above 75_C. d. Derate 12 mW/_C above 75_C. e. Derate 7.6 mW/_C above 75_C. 16-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW 16-Pin Narrow Body SOIC and TSSOPe . . . . . . . . . . . . . . . . 600 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW Schematic Diagram (Typical Channel) V+ 5V Reg Level Shift/ Drive INX V- V+ DX SX GND V- Figure 1. 2 Siliconix E-77071--Rev. E, 01-Sep-97 DG201HS Specificationsa Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) V+ = 16.5 V, V- = -16.5 V VD = "15.5 V VS = #15.5 V V+ = 16.5 V, V- = -16.5 V VS = VD = #15.5 V VANALOG rDS(on) IS = -10 mA, VD = "8.5 V V+ = 13.5 V, V- = -13.5 V Full Room Full Room Room Full Room Full Room Full 25 3 0.1 0.1 0.1 -1 -60 -1 -60 -1 -60 1 60 1 60 1 60 -1 -20 -1 -20 -1 -20 1 20 1 20 1 20 nA V- V+ 50 75 V- V+ 50 75 V W % A Suffix -55 to 125_C D Suffix -40 to 85_C Symbol V = 15 V, V- = -15 V VV 15 V+ VIN = 3 V, 0.8 Vf Tempb Typc Mind Maxd Mind Maxd Unit Digital Control Input, High Voltage Input, Low Voltage Input Capacitance Input Current VINH VINL Cin IINL or IINH VIN under test = 0.8 V, 3 V Full Full Full Full 5 -1 1 -1 1 2.4 0.8 2.4 0.8 V pF mA Dynamic Characteristics Turn-On Time tON tOFF1 tOFF2 Output Settling Time to 0.1% Charge Injection OFF Isloation Crosstalk (Channel-to-Channel) Source Off Capacitance Drain Off Capacitance Channel On Capacitance Drain-to-Source Capacitance ts Q OIRR CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 1 kW, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 kW, CL = 10 pF f = 100 kHz RL = 1 kW, CL = 35 pF VS = "10 V, VINH = 3 V See Figure 3 Room Full Room Full Room Room Room Room 48 30 150 180 -5 85 dB Room Room Room VS, VD = 0 V f = 1 MHz V, Room Room 100 8 8 30 0.5 pF pC 60 75 50 70 60 75 50 70 ns Turn-Off Time XTALK CS(off) CD(off) CD(on) CDS(off) Power Supplies Positive Supply Current Negative Supply Current Power Consumptionc I+ I- PC V+ = 15 V, V- = -15 V VV 15 VIN = 0 or 5 V Room Full Room Full Full 4.5 10 3.5 -6 240 -6 240 mW 10 mA Siliconix E-77071--Rev. E, 01-Sep-97 3 DG201HS Specificationsa for Single Supply Conditions Unless Otherwise Specified V+ = 10.8 V to 16.5 V V- = GND = 0 V VIN = 3 V, 0.8 Vf A Suffix -55 to 125_C D Suffix -40 to 85_C Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Symbol Tempb Typc Mind Maxd Mind Maxd Unit VANALOG rDS(on) IS(off) IS = -10 mA, VD = 8.5 V V+ = 10.8 V Full Room Full Room Full Room Full Room Full 65 0.1 0.1 0.1 0 V+ 90 120 0 V+ 90 120 V W Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) V+ = 16.5 V, VS = 0.5 V, 10 V , , VD = 10 V 0 5 V V, 0.5 -1 -60 -1 -60 -1 -60 1 60 1 60 1 60 -1 -20 -1 -20 -1 -20 1 20 1 20 1 20 nA V+ = 16.5 V, VD = 0.5 V, 10 V Digital Control Input, High Voltage Input, Low Voltage Input Capacitance Input Current VINH VINL Cin IINL or IINH V+ = 16.5 V VIN under test = 0.8 V, 3 V Full Full Full Full 5 -1 1 -1 1 2.4 0.8 2.4 0.8 V pF mA Dynamic Characteristics Turn-On Time tON tOFF1 tOFF2 Output Settling Time to 0.1% Charge Injection Off Isloation Crosstalk (Channel-to-Channel) Source Off Capacitance Drain Off Capacitance Channel On Capacitance ts Q OIRR CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 1 kW, CL = 10 pF f = 100 kHz Any Other Channel Switches RL = 1 kW, CL = 10 pF f = 100 kHz f = 1 MHz VANALOG = 0 V RL = 1 kW CL = 35 pF, VS = 2 V F kW, V= 10.8 V, See Figure 2 Room Full Room Full Room Room Room Room 150 180 10 85 dB Room Room Room Room 100 10 10 30 pF pC 50 70 50 70 50 70 50 70 ns Turn-Off Time XTALK CS(off) CD(off) CD(on) Power Supplies Positive Supply Current Power Consumptionc I+ PC V+ = 15 V, VIN = 0 or 5 V V Full Full 10 150 10 150 mA mW Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. 4 Siliconix E-77071--Rev. E, 01-Sep-97 DG201HS Typical Characteristics 70 rDS(on) - Drain-Source On-Resistance ( W ) 60 50 40 "10 V 30 20 "20 V 10 0 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) 180 rDS(on) - Drain-Source On-Resistance ( W ) 160 140 120 100 80 10 V 60 40 20 0 0 2 4 6 8 10 12 14 16 VD - Drain Voltage (V) 10 pA -60 -40 -20 0 20 40 60 80 100 120 140 12 V 15 V 7V Leakage 1 nA ID(on) 100 pA IS(off), ID(off) "15 V rDS(on) vs. VD and Power Supply Voltages rDS(on) - Drain-Source On-Resistance ( W ) 50 rDS(on) vs. VD and Temperature V+ = 15 V V- = -15 V 40 125_C 30 85_C 25_C 20 0_C -55_C 10 "5 V 0 -15 -10 -5 0 5 10 15 VD - Drain Voltage (V) 10 nA rDS(on) vs. VD and Single Power Supply Voltages V+ = 5 V Leakage Currents vs. Temperature Temperature (_C) Input Switching Threshold vs. Supply Voltage 2.5 55 Switching Time vs. Power Supply Voltage 2 Switching Time (ns) 50 VIN ( V ) 1.5 45 tON 1 40 0.5 35 tOFF 0 "4 30 "6 "8 "10 "12 "14 "16 "18 "20 "4 "6 "8 "10 "12 "14 "16 "18 "20 Supply Voltage (V) Positive/Negative Supplies (V) Siliconix E-77071--Rev. E, 01-Sep-97 5 DG201HS Typical Characteristics (Cont'd) Switching Times vs. Temperature 45 V+ = 15 V V- = -15 V 40 Switching Time (ns) 55 35 t ON , t OFF (ns) 50 45 40 25 35 tOFF 20 -55 30 -25 0 25 50 75 100 125 4 6 8 10 12 14 16 18 20 Temperature (_C) V+ - Positive Supply (V) tON tON 65 60 Switching Times vs. Single Supply Voltage 30 tOFF Switching Times vs. Temperature 50 45 Switching Time (ns) 40 35 30 25 20 -55 tOFF V+ = 10.8 V V- = 0 V Chargie Injection (pC) 20 Charge Injection vs. Source Voltage V+ = 15 V, V- = 0 V 10 0 -10 -20 -30 -40 -15 V+ = 15 V V- = -15 V tON -25 0 25 50 75 100 125 -10 -5 0 5 10 15 Temperature (_C) VS - Source Voltage (V) Off Isolation vs. Frequency 120 110 100 90 OIRR 80 70 60 50 40 10 k RL = 1 kW RL = 100 W V+ = 15 V V- = -15 V 100 k 1M 10 M f - Frequency (Hz) 6 Siliconix E-77071--Rev. E, 01-Sep-97 DG201HS Test Circuits +15 V 3V 50% 0V tOFF1 VS 90% Switch Output -15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) VO tON 10% tOFF2 tr <20 ns tf <20 ns V+ "10 V S IN 3V GND V- RL 1 kW CL 35 pF D VO Logic Input Switch Input Figure 2. Switching Time +15 V Rg V+ S IN D CL 1 nF V- VO VO DVO 3V GND INX SWON OFF Q = DVO x CL -15 V Figure 3. Charge Injection C +15 V C V+ +15 V V+ VS S D VO RL GND V- C Rg = 50 W 0V, 2.4 V S1 IN1 S2 IN2 GND -15 V -15 V Off Isolation = 20 log VS VO XTALK Isolation = 20 log C = RF bypass VS VO V- C D2 RL D1 50 W VS Rg = 50 W 0V, 2.4 V IN NC 0V, 2.4 V VO Figure 4. Off Isolation Figure 5. Crosstalk Siliconix E-77071--Rev. E, 01-Sep-97 7 DG201HS Applications A high-speed, low-glitch analog switch such as Siliconix's DG201HS improves the accuracy and shortens the acquisition and settling times of a sample-and-hold circuit. Input Buffer VANALOG DG201HS JFET Buffer OUTPUT to A/D Converter Si581 CH (Polystyrene) SAMPLE/HOLD 8 Siliconix E-77071--Rev. E, 01-Sep-97 |
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